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Kev nce qib thiab kub txheej txheem ntawm T FT txheej txheem

Oct 10, 2017

Kev nce qib thiab kub txheej txheem ntawm T FT txheej txheem

Tus yuam sij rau txoj kev sib haum a-Si TFT yog tsim kom muaj lub zoo nruab nrab ntawm thaj tsam ntawm thaj tsam thiab lub qhov rooj ntawm lub qhov rooj thaiv, uas yog los ua kom muaj kev sib tw ntawm lub qhov hluav taws xob ntawm FE. Cov kev sib txuas ntawm kev ua Si-Si cov yeeb yam muaj tsawg heev vim yog muaj coob leej ntawm cov teeb meem tsis sib xws thiab kev sib tham, Cov kev tshwm sim qhia tau tias lub rooj thaiv qhov thaiv txheej txheem yog tsim los ntawm cov qauv ntawm amorphous silicon nitridation, thiab cov yeeb yaj duab zoo yuav ua li cas nrog FE = 0.3 mus rau 0cm, 2 /, V, s, SiN thiab X. Ntxiv mus, ib tug loj npaum H yog ntxiv los ua kom tiav cov neeg hauv xeev thaum lub sijhawm uas tsim tawm ntawm thaj av ua haujlwm a-Si, yog li ua tau FE tawm tau tshaj 1. 0cm2 / V rau s.

Tib lub sij hawm, vim tias kev tsis tshua muaj neeg ntawm ib-Si, neeg yuav xav tau yog tias cov khoom ntawm thaj tsam ntawm thaj tsam raug xaiv los ua polysilicon (Poly - Si), qhov kev tsiv chaw tuaj yeem ua tau zoo heev, thiab qhov no yog qhov hu ua Po ly- Si TFT yuav raug tsim. Kev tsim ntawm cov Poly -Si muaj qhov qis zog CVD (LPCVD) txoj kev thiab cov txheej txheem theem kev loj hlob (SPC), siv ob txoj kev los tsim Poly -Si xav tau kub dua 600 DEG C, uas ua rau lub khw muag khoom tam sim no nrog lub Poly -Ti T FT khoom tsis yog siv lub iav substrate tab sis lub quartz substrate, li no zoo heev txhim kho cov khoom muag. Tab sis tsis yog tsim ntawm loj loj kua siv lead ua kua.

Lub Poly-Si zaj duab xis yog xaiv raws li thaj tsam ntawm thaj tsam nrog cov zoo li nram no:

(1) high speed kab rov tav thiab ntsug tsav lub voj voog thiab ib lub pixel transistor ua rau tib lub substrate, tsis zoo li lub A-Si TFT li cov tsav hluav taws xob thiab cov pixel rau lwm tus neeg sab nraud ntawm txhua lwm, siv sab nraud kab kom tiav cov kev sib tshuam nruab nrab ntawm ob. Qhov no ua rau kom muaj kev cia siab ntawm qhov khoom thiab ua kom muaj peev xwm ntawm lub vijtsam.

(2) vim hais tias ntawm daim ntawv thov cov khoom siv ntawm semiconductor thiab nws lub tshuab tshuab microfabrication, cov pixel ntim tau ua kom zoo heev.

(3) cov txheej txheem kev sib dhos ntawm tus kheej kheej tuaj yeem txo qhov kev pabcuam kev pov hwm, kom cov pixels tsis yoojyim hlawv dhau, thiab qhov kev xa tawm tuaj yeem yuav nce, thiaj li tau txais cov duab zoo thiab raug zoo.

(4) Poly, -Si, T, FT, xws li LDD (lub teeb doped) qauv, lub leakage tam sim no ntawm high temperature yog me me, thiaj li tau txais zoo kub duab zoo.

(5) zaj duab xis ultra-thin Poly-Si, T thiab FT tuaj yeem ua rau thaj tsam ua haujlwm Poly-Si thiab lub qhov rooj tho insulating heev nyias, yog li ua qhov peev xwm ntawm lub rooj vag electrode, yog li muab tau rau cov neeg ua haujlwm tsawg tsawg.

Tig Tig T FT muaj ntau qhov zoo, nws tsis yog vim tias txoj kev siv cov txheej txheem kub siab thiab muab siab yooj yim, tsis yog yuav ua li cas hloov cov kev hloov Poly-Si T FT mus rau hauv kev kub siab uas tsis tshua muaj kev kub yeem coj los ntawm ntau dua thiab ntau cov neeg soj ntsuam ntawm kev soj ntsuam, thiab yog tas li ua dhau. Kev loj hlob ntawm Si zaj duab xis, recrystallization ntawm Si thiab kev ua kom tsis taus kev pauv tau hloov los ntawm peb cov kauj ruam ntawm kev kub siab (Cov lus 1).


Cov lus 1

Kev loj hlob ntawm cov txheej txheem tsis tshua muaj kev kub






Tshuab


Tam sim no


H tshaj plaws





S Kuv qhov kev loj hlob Membrane

LPCVD (SiH 4 )

Paub →

PECVD (Si 2 H 6 )



600


300

S i Recrystallization

SPC 600

Paub →

Laser kev sib sab laj



10 ~ 20hrs


300 ℃ qab

Kev ua haujlwm tsis zoo


ion implantation

Paub →

Ion doping



600


300

Nyob rau hauv Nyij Pooj, qhov kub qis Po, ly-Si, T, FT txheej txheem yog tsim los ntawm cov khoom ua khoom. Daim duab 1 yog ib qho qauv duab ntawm ib qho embryed embedded Poly -Si TFT nyob rau hauv ib lub neej tom ntej tsav tsheb.

图片1.png

Xam phaj 1 cov neeg tsav tsheb tau tsim kho hauv CM OS -TFT

Tus tsav tsheb yog tsim los ntawm CM OS-T FT, thiab cov txheej txheem kev ua haujlwm zoo li nram no:

Lub iav substrate, cov ntaub ntawv pov thawj hauv qab, Lub Luam Tawm, Laser, Anneal / etching lub rooj vag insulating zaj duab xis, lithography, lithography, etching, rooj vag electrode / n-ion doping, n + doping, lithography, lithography, p + ion doping, interlayer insulating zaj duab xis, lithography, etching, lithography, O / IT / cov ntaub ntawv thaiv, lithography, etching los tiv thaiv membrane / etch