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Kawm ntawm Electron Beam Lithography Hauv UV3 Zoo Peev Xwm

Nov 17, 2017
  1. Luv qhia txog electron beam lithography system thiab UV 3 zoo tiv thaiv


Nyiv JEOL's JBX-5000LS electronics beam raug qhov system electron rab phom qhov chaw rau LaB6 thermal teb emission; raug txoj kab rau ob chav Gaussian vector scan ncaj qha sau; electron beam acceleration zog tsau 25 keV thiab 50keV ob cov ntaub ntawv, ua rau lub vas beam chaw inch 8 nm; Txwv kev txwv ntawm 30 nm; Nraaj overlay tseeb = 60 nm (3 σ); Cov ntawv sib dhos uas cim tau xws li cov khoom siv kos duab thiab cov hlau nplaum nrog qhov chaw raug tsawg dua 0.1 μm; Kev Tswj Lub tshuab yog DEC V AX system.


Cov kev ua ntawm lub cev tiv thaiv yog khaws cov ntaub ntawv thiab hloov cov txheej txheem uas raug, uas yog feem ntau yog cov organic polymer uas tsim kev daws teeb meem. Kev qhia txog kev tiv thaiv nyob rau hauv cov txheej txheem muaj xws li kev daws teeb meem, kev ua zoo, qhov sib txawv, kev tiv thaiv kev ua kom muaj zog, thermal stability, adhesion rau lub substrate, thiab yooj yim ntawm cia. Feem ntau cov tsoos hluav taws xob nqaj tawv tiv thaiv yog PMM A (polymethylmethacrylate).


  

PMM Qhov zoo tiv thaiv, kev daws teeb meem, feem ntau siv los ntawm nanoscale microfabrication. Tab sis nws qhov teeb meem loj tshaj plaws yog kev mob siab rau ntshav siab, siab kub nkag yooj yim txaus, thiab cov kev xav tsis tshua muaj heev, koob tshuaj tseem ceeb tshaj lwm yam kev thuam ntau dua 10 zaug.


Yog li no, PMMA tsis haum rau cov thooj txhij loj thiav CMOSFinFET thiab cov khoom siv hluav taws xob uas yog sib xyaws nrog cov txheej txheem mainstream CMOS. Vim tias tib txoj kev yooj yim ntawm e-nqaj tsis muaj teeb meem vim tias cov neeg tsis muaj zog, feem ntau ntawm cov neeg siv hauv kev sib sib zog nqus cov yeeb yam tuaj yeem siv tau rau hauv cov hlau kab hluav taws xob. Lub Tebchaws Asmeskas Shipley tus UV 3 zoo tawm yog kev hloov kho cov dej tshuaj yaj hloov ua siv rau DUV raug nrog ib qho kev sib tw ntawm 0.25 μm.


UV 3 muaj ib tug copolymer ntawm hydroxystyrene thiab t-butylacrylate thiab thiaj li muaj thermal stability, thiaj li rhiab heev rau plav impurities uas diffuse los ntawm gel, thiab suppresses tus tsim ntawm photoacid generators cuam tshuam lub rhiab heev ntawm cov yas. Nyob rau hauv daim ntawv no, UV 3 zoo tiv thaiv tau siv rau electron beam lithography rau fabricate groove qauv ntawm ib lub pob silicon recess CMOS FinFET. Lub hom phiaj ntawm tus txheej txheem yog tias qhov dav ntawm tus qauv groove rau ntawm 100 mm silicon wafer yog 150-200 nm, uas yog ze rau 90 degrees Ncaj sab sab.


Tsis tas li ntawd, lub tshiab silicon CMOS FinFE T ntaus ntawv muaj ob txoj kev zoo: kab convex (kab) thiab cov yeeb nkab tho (DI TCH). Vim tias e-Nqaj cov ntawv sau ncaj qha yog qhov txheej txheem tsawg, nws tseem ceeb heev kom txo cov sij hawm raug. Nws yog txoj kev yooj yim tshaj plaws los txo cov cheeb tsam ntawm electron beam ncaj qha sau; tib lub sij hawm, tag nrho cov cheeb tsam kos duab tsawg dua li ntawm thaj chaw dawb.


Vim li no, kev siv tsis zoo rau cov qauv kab kos cov kab kos thiab siv cov qauv zoo hauv cov qauv ntawm qhov muag nplhaib yog qhov yuav tsum tau muaj kev ncaj qha rau cov kab hluav taws xob hauv kab hluav taws xob hauv cov cheeb tsam loj. Nyob rau hauv daim ntawv no, cov qauv ntawm qhov zis yog tsim los ntawm UV 3 zoo tiv thaiv.