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Kev Tshawb Fawb Txog Kev Tsim Cov Radiation Hardened Layout Kev Sib Koom Siab Hauv Kev Ua Si

Jan 16, 2018

1. Kev Ntsuam Xyuas

Nrog kev sib sib zog nqus deepening ntawm tib neeg kev tshawb nrhiav ntawm lub ntiaj teb, ntau dua thiab ntau cov twj siv hluav taws xob tau raug siv hauv thaj chaw ntawm aerospace. Lub neej ntawm cov hluav taws xob loj protons, neutrons, alpha hais thiab hnyav ions nyob rau hauv qhov chaw ib puag ncig yuav muaj feem xyuam rau cov khoom siv hluav taws xob hauv cov khoom siv hluav taws xob, thiab tom qab ntawd ua rau muaj kev cuam tshuam thiab lub neej ntawm kev kos poom. Vim li no, thiaj li ua tau raws li qhov xav tau ntawm kev davhlau rau kev davhlau thiab ua kom muaj kev ruaj ntseg thiab ruaj khov ntawm cov khoom siv hluav taws xob nyob rau hauv chaw ua haujlwm, qhov kev tshawb fawb ntawm cov teebmeem hluav taws xob ntawm cov khoom siv hluav taws xob thiab cov teebmeem ntawm cov teebmeem hluav taws xob tau ua rau kev tshawb fawb txog kev lag luam kev siv.


Tam sim no, raws li lub tshuab nruab nrab ntawm cov khoom siv hluav taws xob, cov ntim thawv CMOS txheej txheem tau nkag mus tob tob thiab tseem tsawg tshaj 100nm. Daim ntawv thov ntawm cov khoom siv hluav taws xob ua ke los ntawm cov txheej txheem no yuav raug cuam tshuam los ntawm cov txiaj ntsim ntawm tag nrho cov koob tshuaj thiab cov nyhuv ntawm cov khoom nyhuv ntawm qhov hluav taws xob. Kev siv hluav taws xob los ntawm cov cim hluav taws xob hauv nruab nrab ntawm cov khoom hluav taws xob yog pib los ntawm qhov pib ntawm qhov siab, qhov tam sim no thiab niaj hnub hloov kev lag luam, thiab cov kev ua haujlwm logic. Yog li ntawd, cov khoom siv cuab yeej hluav taws xob thiab cov qauv tsim kho tsis tuaj yeem ua tau raws li qhov xav tau ntawm qhov chaw thiab kev siv tub rog, thiab tshwj xeeb hluav taws xob kom tsim cov qauv tsim tawm.


2. Ntsuas cov teebmeem hluav taws xob

2.1 Nyhuv ntawm tag nrho cov koob tshuaj siv rau cov khoom siv

2.11 Cov nyhuv ntawm tag nrho cov tshuaj phom sij rau ntawm oxide txheej ntawm lub rooj vag nkag

Txawm lub qhov rooj limtiam lossis lub qhov rooj hlau siv hlau, nws muaj 50 ~ 200nm SiO 2 txheej ntawm lub qhov rooj thiab lub substrate. Nyob rau hauv lub sam thiaj, cov khoom txig ntawm cov nqi yuav tshwm sim rau ntawm SiO 2 / Si interface. Xws li tus nqi them zoo yuav ua rau lub siab ntawm qhov pib qhov hluav taws xob ntawm lub cuab yeej, uas yuav nws thiaj li cuam tshuam kev ua tau zoo ntawm lub cuab yeej. Qhov txawv ntawm qhov pib muaj qhov sib npaug sib luag ntawm tus naj npawb ntawm cov tswv cuab cavitation uas tau ua los ntawm hluav taws xob tuaj yeem yog hais tias:

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Formula: BH yog qhov zoo ntawm lub cev ntawm lub cavitation lub cev ntom nti tom qab cov oxide raug ntes. Qhov parameter h 1 yog qhov sib txawv ntawm Si / SiO 2 interface mus rau oxide, thiab lub qhov ntom ntom ntawm qhov kev deb no tau siv hluav taws xob nrog lub substrate tob rau hauv lub qhov rooj. Tsuas yog thaum oxide thickness tsawg dua 2 xh 1 (6 nm), tsis muaj qhov tseem ceeb tuav tau pom.


Daim duab 1 qhia tau hais tias qhov kev hloov ntawm tus qauv IV ntawm tus qauv NMOS thiab PMOS nrog rau kev nce qib ntawm cov hluav taws xob ionizing. X axis nyob hauv daim duab yog qhov rooj vag volt VG, thiab Y axis yog cov ntws tawm tam sim no. 0 yog tus cwj pwm IV ntawm kev ntaus ua ntej ua tsis ncaj; 1, 2, 3 thiab 4 qhia txog tus xeeb ceem IV ntawm cov cuab yeej hauv qab irradiated sib txawv. Raws li lub sij hawm nce, tag nrho ionization koob nce, thiab qhov hloov ntawm qhov pib ntawm qhov pib siab. Rau lub NMOS lub raj, thaum lub qhov muaj zog ntawm lub qhov rooj loj dua qhov pib qhov teeb meem, qhov transistor pib dhau. Rau PMOS transistors, cov transistors muaj kev sib txuas thaum lub qhov tsis muaj qhov hluav taws xob ntawm lub qhov rooj yog tsawg dua qhov pib qhov hluav taws xob. Raws li daim duab 1 (a), qhov pib qhov taw hluav taws xob tsis zoo nyob rau hauv qhov tsis zoo nrog qhov nce ntawm tag nrho ionization koob ntawm NMOS lub raj, uas qhia tau hais tias muaj ib qho kev txo qis ntawm qhov pib qhov hluav taws xob. Cov transistors uas yuav tsum tau muab txiav tawm yuav tsum muab rau, thiab cov transistors uas yuav tsum tau nyob ntawm qhov yuav tsum tau nres ntawm qhov kawg ntawm lub sijhawm. Zoo ib yam, raws li daim duab 1 (b), PMOS lub raj loj tuaj nrog kev nce ntawm kev noj tshuaj ionization, thiab qhov pib qhov hluav taws xob hloov mus rau qhov kev tsis pom kev, uas qhia qhov nce ntawm qhov pib qhov siab. Cov transistors uas yuav tsum tau ua yog muab tua, thiab cov transistors uas yuav tsum tau txiav tawm yuav tsum tau ua thaum ua. Raws li cov mis (1), qhov pib ntawm lub NMOS raj thiab PMOS raj yog qhov sib npaug ntawm cov xwm txheej ntawm oxide txheej ntawm lub qhov rooj oxide txheej.


Kuj zoo, nrog txo ntawm qhov tseem ceeb ntawm tus txheej txheem, lub thickness ntawm oxide txheej ntawm tus ntaus ntawv txo, thiab cov kev hloov ntawm IV yam ntxwv ntawm tus ntaus ntawv txo. Tom qab nkag rau 0.18 micron m, lub rooj vag oxide thickness yog tsawg dua 12NM, thiab qhov pib ntawm qhov hluav taws xob ua rau hluav taws xob tawg yog txo los sis txawm ploj. Tus ntawm lub mechanism ntawm tus ntaus tau yuav ignored hauv Circuit Court tsim.

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2.12 Khiav tawm hauv cheeb tsam tawm los ntawm tag nrho cov koob tshuaj nyhav

Kev sib haum ntawm tus kheej ntawm NMOS lub raj, lub qhov rooj polysilicon yog tso rau ntawm nyias txheej oxide txheej, ua los ntawm thaj av uas tsis tshua muaj qhov tsis yog los ntawm qhov chaw / tso rau hauv polysilicon, cov txheej txheem kev tsim ntawm lub voj voog ntawm kev siab, tab sis lub xub ntiag polysilicon rooj vag thiab qhov rooj oxide oxygen hloov cheeb tsam ua rau tus kab mob parasitic transistor, tus kab mob parasitic transistor rhiab heev rau tag nrho cov tshuaj nyhuv. Raws li cov pa hluavtaws, qhov zoo ntawm tus nqi ntawm ntug dej SiO2 yuav ua rau kom muaj cov kabmob ntawm cov kab txiav parasitic transistor. Nrog rau kev nce cov duab hluav taws xob, qhov tawm ntawm lub tsho ntawm tus kab mob parasitic transistor tseem tuaj yeem sai sai. Thaum lub leakage tam sim no nce mus rau lub xeev qhib tam sim no ntawm cov neeg sab nraud transistor, tus transistor yuav qhib zwm, ua rau tsis ua hauj lwm. Daim duab 2 (a) yog daim duab txheej txheem ntawm sab saum toj ntawm txoj kev dim pa, thiab daim duab 2 (b) yog daim duab txheej txheem ntawm txoj kev tawm ntu tawm.

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Lub qhov cub oxide txheej yog keeb kwm raug rho tawm ntawm cov pob zeb MOS. Txawm li cas los xij, vim tias tag nrho cov nyhuv koob tshuaj, qhov electron lub qhov khub yuav raug nyob rau hauv muaj oxygen, thiab lub xeev lub xeev tau sau los ntawm lub qhov ntawm Siio 2 sab ntawm Si / SiO 2 qhov system yuav ua rau daim teb pa oxygen downward thiab ua ib qho kev xa tawm hluav taws xob. Lub tshuab xiam hluav taws xob pom nyob hauv daim duab 3. Txoj kev khiav tawm ntawm qhov tawm ntawm qhov chaw oxygen tuaj yeem mus rau cov kab mob MOS tube qhov chaw / tawm, uas yuav ua rau lub VDD mus rau VS.

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2.2 Cov nyhuv ntawm ib qho yooj yim ntawm cov nplaim hluav taws xob

Ib qho yooj yim ntawm ib qho zom zaws tshwm sim nyob rau hauv ib qho kev ntxeem ntxoo uas muaj cov qauv cia. Peb siv lub latch ua piv txwv los piav cov mechanism ntawm cov kev ua haujlwm ntawm ib qho yooj yim. Daim duab 4 yog ib qho qauv yooj yim. Thaum cov lus tso tawm los ntawm ib qhov teeb meem tshwj xeeb los ua ib qho "funnel effect", ib qho loj npaum li cas yog tsim tawm, raws li muaj nyob hauv daim duab 5. Hauv qhov kev txiav txim ntawm lub teb hluav taws xob, tus nqi uas tsim los ntawm kev ionization yog nyob rau hauv tus ntaus ntawv, uas thaum kawg cuam tshuam lub xeev ntawm lub latch.

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Thaum cov ntaub ntawv khaws cia yog "0", lub NMOS lub raj yog nyob rau hauv av. Ntawm qhov no, qhov xaus ntawm PMOS raj yog nyob rau hauv rov qab thwj thij xeev nrog PN hlawv ua los ntawm N zoo, thiab kev taw qhia ntawm lub tuam tsev fais fab teeb tsa yog hais los ntawm N zoo mus rau PMOS xias kawg. Thaum qhov kawg ntawm PMOS yog qhov teeb meem los ntawm ib qho chaw tshwj xeeb, ntau lub tshuab hluav taws xob muaj nyob rau hauv. Nyob rau hauv qhov kev txiav txim ntawm lub teb hluav taws xob, ntau qhov ntawm cov dej xau mus rau leaky kawg ntawm PMOS, thiab cov electrons hloov mus rau N cuab. Thaum tus naj npawb ntawm cov nqi raug nplua rau cov PMOS qhov xaus ntawm ib qhov ntau qhov siab, nws yuav hloov lub xeev ntawm qhov qub cia "0" thiab tig mus rau qhov "1". Lub hauv paus ntsiab lus muaj nyob rau hauv Xam 6 (a). Zoo sib xws, thaum cov ntaub ntawv khaws cia yog "1", PMOS raj yog nyob rau hauv lub hwj chim. Nyob rau lub sij hawm no, qhov xaus ntawm NMOS lub raj yog nyob rau sab nraud ntawm lub teb chaws nrog lub PN hlawv los ntawm P-substrate, thiab kev taw qhia ntawm cov hluav taws xob fais fab teeb tsa yog hais los ntawm qhov xaus ntawm NMOS raj mus rau P-substrate. Thaum qhov xau kawg ntawm NMOS yog qhov teeb meem los ntawm ib qho chaw tshwj xeeb, ntau lub tshuab hluav taws xob muaj nyob rau hauv. Nyob rau hauv qhov kev txiav txim ntawm lub teb hluav taws xob, coob tus electrons txav mus rau leaky kawg ntawm lub NMOS, thaum lub cavitation yog drifting rau P-substrate. Thaum tus naj npawb ntawm tus nqi tsis zoo rau NMOS nce mus txog qee theem, nws yuav hloov qhov tseem ceeb cia ntawm "1" thiab hloov mus rau "0", uas yog muaj nyob hauv daim duab 6 (b).

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Los ntawm cov qauv saum toj no, nws yuav tsis yooj yim rau koj pom tias qhov kev tshwm sim tsis txaus siab yog vim lub neej ntawm PN nkag mus hauv CMOS Circuit Court qauv, thiab qhov hloov ntawm tus nqi hluav taws xob yog tau txais kev pom zoo los ntawm cov kev tsim hluav taws xob, uas cuam tshuam cov thawj lub xeev.